A research group that includes Professor Yuta Saito from The Research Center for Green X-Tech has identified bismuth telluride (Bi2​Te3​) as a promising electrode material for next-generation germanium (Ge) semiconductors. They have successfully developed an ideal bonding technology for this material. The results of this research were published in the July 11, 2025, issue of APL Materials, a materials science journal published by the American Institute of Physics.

Paper Information

• Title: Realization of Ideal Ohmic Contact to n-Ge: The Key Roles of Ge-Bi-Te for Quasi-van der Waals Interface Formation
• Authors: Wen Hsin Chang, Shogo Hatayama, Naoya Okada, Toshifumi Irisawa, Yuta Saito
• Journal: APL Materials (published July 11, 2025)
• DOI: 10.1063/5.0278628

https://www.tohoku.ac.jp/japanese/2025/07/press20250731-02-cmos.html